3D Parallel Monte Carlo Simulation of GaAs MESFETs
نویسندگان
چکیده
منابع مشابه
VLSI Design, 6(1-4):273-276, 1998. 3D Parallel Monte Carlo Simulation of GaAs MESFETs
We have investigated three-dimensional (3D) e ects in sub-micron GaAs MESFETs using a parallel Monte Carlo device simulator, PMC-3D [1]. The parallel algorithm couples a standard Monte Carlo particle simulator for the Boltzmann equation with a 3D Poisson solver using spatial decomposition of the device domain onto separate processors. The scaling properties of the small signal parameters have b...
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ژورنال
عنوان ژورنال: VLSI Design
سال: 1998
ISSN: 1065-514X,1563-5171
DOI: 10.1155/1998/64531